Infineon BAT15099RE6327HTSA1 Schottky Diode: Key Features and Applications

Release date:2025-10-31 Number of clicks:181

Infineon BAT15099RE6327HTSA1 Schottky Diode: Key Features and Applications

The Infineon BAT15099RE6327HTSA1 is a high-performance dual common-cathode Schottky barrier diode designed for surface-mount applications. Engineered with precision, this component is a cornerstone in modern electronic design, offering a blend of efficiency, speed, and reliability that is critical for a wide array of circuits.

Key Features

A primary advantage of this Schottky diode is its extremely low forward voltage (typically 380 mV at IF = 1 mA). This characteristic is fundamental for minimizing power loss and enhancing overall system efficiency, especially in low-voltage applications where every millivolt counts. Complementing this is its very small reverse leakage current, which ensures superior performance in power-sensitive and precision circuits.

The device is also characterized by its high switching speed, a direct benefit of the Schottky barrier's unipolar nature, which eliminates the minority carrier charge storage time found in standard PN-junction diodes. This makes it an ideal choice for high-frequency applications. Furthermore, its common-cathode configuration in a single SOT-23 package saves valuable PCB space, simplifying board layout and reducing assembly costs for compact designs.

Primary Applications

The combination of these features makes the BAT15099RE6327HTSA1 exceptionally versatile. Its most prominent application is in power supply rectification, particularly as a blocking diode in switch-mode power supplies (SMPS) and DC-DC converters. Here, its low forward voltage directly translates to higher efficiency and reduced heat generation.

It is also indispensable in voltage clamping and protection circuits. The diode's rapid switching speed allows it to effectively suppress voltage spikes and transients, protecting sensitive integrated circuits (ICs) from damage caused by electrostatic discharge (ESD) or inductive switching events.

Another critical use case is in reverse polarity protection. The low VF ensures a minimal voltage drop in the forward path, preserving the available voltage for the load. Furthermore, this diode is a perfect fit for high-frequency signal demodulation and mixing in RF applications, as well as serving as a crucial component in OR-ing circuits for redundant power systems.

ICGOOODFIND

The Infineon BAT15099RE6327HTSA1 stands out as a superior solution for designers seeking to optimize efficiency, speed, and space. Its exceptional blend of a low forward voltage and fast switching performance makes it an indispensable component across power management, protection, and RF circuitry.

Keywords:

Schottky Diode

Low Forward Voltage

High Switching Speed

Reverse Polarity Protection

Power Rectification

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