On July 3, Kioxia and SanDisk began sample shipments of their jointly developed 10th-generation BiCS FLASH 3D NAND, starting with a 1Tb TLC die produced at Kioxia’s Fab2 in Iwate, Japan.

The 332-layer design retains two core processes from BiCS8 – CBA (wafer bonding) and OPS (pitch selection) – which shorten the yield ramp timeline for high-stack production. On the spec sheet, the BiCS10 1Tb TLC supports Toggle DDR6.0, SCA protocol, and PI-LTT, delivering I/O speeds up to 4800MT/s. Density reaches 29Gb/mm² – a 59% gain over BiCS8. Power and efficiency also improve: output power drops 34% with 30% better read efficiency; input power falls 10% with 18% better write efficiency – directly addressing AI data center needs for high-density, low-power storage.

From ICgoodFind: More layers, less power, faster I/O – BiCS10 is built for AI rack density. Sampling is the easy part; watch for volume yield in 2027.