Toshiba Rolls Out 40V 120A MOSFET in S-TOGL Package – Low 1.54mΩ RDS(on) for 12V Automotive Systems

Release date:2026-07-31 Number of clicks:179

Toshiba has launched the XPJ1R504PB, an N-channel 40V, 120A automotive MOSFET featuring the new S-TOGL (SOP Advance EWF) package, designed for 12V vehicle systems – targeting inverters, semiconductor relays, load switches, and motor drives. Together with the already-mass-produced XPJR6604PB and XPJ1R004PB, Toshiba now offers a diversified selection for varying automotive requirements.

The S-TOGL package combines compact size with superior heat dissipation, enabling smaller ECU designs while improving power conversion efficiency. The gull-wing lead design absorbs mounting stress, enhancing solder joint durability, while a leadless source-to-pin structure reduces parasitic resistance to achieve maximum RDS(on) of just 1.54mΩ at 10V VGS.

1785487933897329.png

Inside, a thick copper frame lowers channel-to-case thermal resistance to 0.76°C/W, cutting conduction loss and boosting overall system efficiency. Compared to the previous SOP Advance WF package, the new design reduces overall resistance by 54%; versus the in-market XPHR7904PS, RDS(on) drops 6% and thermal impedance improves 33%.

Toshiba is also developing XPMR5904PB and XPMR8504PB in the same package, expanding its automotive MOSFET portfolio further.


From ICgoodFind: 40V, 120A, 1.54mΩ – and smaller than before. Toshiba's new package is a thermal and electrical double win for 12V automotive power designs.

Home
TELEPHONE CONSULTATION
Whatsapp
Semiconductor Technology